Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- $kappa$ Gate Dielectric

摘要

Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5–60 mV/decade SS, wide voltage range for ${rm SS}<60~{rm mV}/{rm decade}$ , sturdy ${<}{rm 60}~{rm mV}/{rm decade}$ SS at 85$^{circ}{rm C}$, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the off -state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-$kappa$ ZrHfO gate dielectric pMOSFET.