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首页> 外文期刊>Electron Device Letters, IEEE >Depletion Mode Oxide TFT Shift Register for Variable Frame Rate AMOLED Displays
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Depletion Mode Oxide TFT Shift Register for Variable Frame Rate AMOLED Displays

机译:可变帧率AMOLED显示器的耗尽型氧化物TFT移位寄存器

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This letter demonstrates a shift register circuit at the backplane of depletion mode oxide thin-film transistors (TFTs), which can cover variable frame rates for low-power active matrix organic light emitting diode (AMOLED) displays. The proposed scheme focuses on the stable gate control of a pull-up TFT by securing the charging and discharging paths at the wide operating frequency range. In a prototype high-definition (HD: 1366 × 768) AMOLED panel, it is ensured that fabricated shift registers operate at the wide frame frequency range from 1 to 240 Hz. The measured current consumptions are 30, 4, 6, and 5.8 mA for four clock signals, VGH of 24 V, VGL1 of -6 V, and VGL2 of -14 V at a frame rate of 120 Hz.
机译:这封信演示了耗尽型氧化物薄膜晶体管(TFT)背板上的移位寄存器电路,该电路可以覆盖低功率有源矩阵有机发光二极管(AMOLED)显示器的可变帧速率。所提出的方案着重于通过在宽工作频率范围内确保充电和放电路径来稳定上拉TFT的栅极。在原型高清(HD:1366×768)AMOLED面板中,可以确保所制造的移位寄存器在1至240 Hz的宽帧频率范围内工作。对于四个时钟信号,VGH为24 V,VGL1为-6 V,VGL2为-14 V,以120 Hz的帧频测量的电流消耗分别为30、4、6和5.8 mA。

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