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机译:FeCl3插层掺杂CVD少层石墨烯的表征
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;
Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;
Graphene; Doping; Resistance; Electrodes; Electrical resistance measurement; Conductors; Field effect transistors;
机译:FeCl3插层几层石墨烯可实现高锂离子存储性能
机译:膨胀石墨的电化学插层剥落高产率制备的几层石墨烯的粉末,纸和泡沫粉末膨胀石墨的电化学插层剥落高产率制备的几层石墨烯的粉末,纸和泡沫
机译:通过插层和表面掺杂的组合,杂交掺杂几层石墨烯
机译:在几层石墨烯和带有过渡金属插入的石墨中提高垂直电导率:理论研究
机译:插入少数层石墨烯中的原子结构和掺杂效应
机译:微波辅助化学气相沉积法合成分散的单层/少量N掺杂石墨烯包封的金属纳米晶体以有效地电催化析出氧气
机译:插层和表面掺杂相结合的少层石墨烯混合掺杂