Humidity-Dependent Synaptic Plasticity for Proton Gated Oxide Synaptic Transistor

摘要

Indium-tin-oxide synaptic transistors using proton conducting nanogranular phosphorosilicate glass as gate dielectric are fabricated. Humidity-dependent proton gating behaviors are observed. Moreover, synaptic plasticities are mimicked on the proton gated oxide synaptic transistors. Interestingly, enhanced synaptic facilitation is observed at higher relative humidity originated from the strengthened proton gating. An oxide synaptic transistor with humidity-dependent synaptic plasticities may find potential applications in neuromorphic platforms.