Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement

摘要

Resistance fluctuation is a big concern of resistive random access memory (RRAM) since it has close connection with chip design. In this work, resistance fluctuation of RRAM devices fabricated on 28-nm CMOS platform is investigated systematically by means of low frequency noise measurement. The relationship among resistance fluctuation and resistance states/reading time/ reading conditions is quantitatively analyzed. We show that the resistance broadening has positive correlation with resistance states and reading time. Meanwhile, for reading voltage, it should be selected below 0.3V in order to avoid resistance degradation. Based on this quantitative analysis, an analytical formula to predict the resistance spread as a function of time, resistance, read voltage is derived. This prediction result provides a valuable guideline for selection of resistance working range and read pulse parameter, which is of great importance for future circuit design.