High-Voltage ( 2¯¯¯01 ) β -Ga2O3 Vertical Schottky Barrier Diode With Thermally-Oxidized Termination

摘要

In this letter, a high-performance ((2) over bar 01) beta-Ga2O3 vertical Schottky Barrier Diode (SBD) with a thermally oxidized termination is reported. A novel edge termination at the Schottky contact edge is formed by using thermal oxidation treatment, which reduces the electron concentration and effectively suppresses the peak electric field. By using a thermal oxidation termination, the breakdown voltage (V-br) of beta-Ga2O3 SBD increases from 380 V to 940 V, and the specific on-resistance (R-on,R- sp) just increases from 2.9 m Omega.cm(2) to 3.0 m Omega.cm(2). Our device demonstrates a power figure of merit (V-br(2)/R-on,R- sp) as high as 295 MW/cm(2). These results indicate that the thermally oxidized termination shows a new way to improve the breakdown characteristics of beta-Ga2O3 SBD.