Crosstalk effects between metal and polysilicon lines in CMOS integrated circuits

摘要

In this work the problem of crosstalk between a metal and a polysilicon line is considered. The polysilicon line is modeled as an RC distributed transmission line, and the metal fine is considered as a single node capacitively coupled to the polysilicon line. The voltage response in the polysilicon line to a step transition in the metal line is calculated, and the influence of geometrical aspects, resistance of polysilicon, and evolution of waveform with distance from the driver's end of the poly line are investigated.