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Meet Different Needs with NANDand NOR

机译:NAND和NOR满足不同的需求

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摘要

For the last few years the media has debated which Flash memory technology, NAND or NOR, will emerge as the market winner. This discussion implies that the different Flash technologies are essentially interchangeable in applications, making the two direct competitors for design wins. The reality is, the two technologies address different needs. Understanding the differences between the technologies begins with their names. The original approach to Flash memory followed the structure of other semiconductor memories, which achieve random access by connecting the memory transistors to the bit lines in parallel. Each transistor has a word line and a bit line connection. In this arrangement, if the word line turns on any memory transistor, the transistor connects drain to source and the corresponding bit line goes low. The logic function is similar to that of a "wired NOR", hence the name NOR for this arrangement.
机译:在过去的几年中,媒体一直在争论哪种闪存技术(NAND或NOR)将成为市场赢家。该讨论意味着不同的Flash技术在应用程序中本质上是可互换的,从而使两个直接竞争者赢得了设计大奖。现实情况是,这两种技术可以满足不同的需求。了解技术之间的差异始于其名称。闪存的原始方法遵循其他半导体存储器的结构,这些结构通过将存储晶体管并联连接到位线来实现随机访问。每个晶体管具有字线和位线连接。在这种布置中,如果字线导通任何存储晶体管,则该晶体管将漏极连接至源极,并且相应的位线变低。逻辑功能类似于“有线或非”功能,因此在此布置中名称为“或非”。

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