SiC MOSFET promises high efficiency, smaller size for power conversion systems

摘要

Cree, Inc. announced the release of its second generation SiC MOSFET, positioned as enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These 1200-V MOSFETs deliver desirable power density and switching efficiency at half the cost per Amp of Cree's previous-generation MOSFETs. According to the company, the performance of these new SiC MOSFETs enables the reduction of required current rating by 50 to 70 percent in some high-power applications.