Gate bipolar transistor technology platform reduces power dissipation

摘要

International Rectifier, (IR) introduced a new generation Insulated Gate Bipolar Transistor (IGBT) technology platform. The Generation 8 (Gen8) 1200-V IGBT platform utilizes the company's latest generation trench gate field stop technology to offer desirable performance for industrial and energy saving applications. The Gen8 design allows exceptional V_(ce(on)) to reduce power dissipation and increase power den-sity, and delivers robustness.