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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Flashover Voltage of Alumina Ceramic Contaminated by Metal Vapor in Vacuum Interrupters
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Flashover Voltage of Alumina Ceramic Contaminated by Metal Vapor in Vacuum Interrupters

机译:真空灭弧室中金属蒸气污染的氧化铝陶瓷的击穿电压

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摘要

We investigated the influence of metal vapor contamination of ceramic surfaces on flashover voltage (FOV) in vacuum. First, disk shape alumina (Al{sub}2O{sub}3) ceramics with surface resistivity (ρ) of 10{sup}2-10{sup}15Ω were produced using deposition phenomena of metal vapor emitted from CuCr contacts. The impulse FOV for the ceramics decreased, as ρ reduced; FOV, the conditioning effect on FOV, and the scattering of FOV decreased when ρ was below 10{sup}12Ω. Therefore, the criterion value of ρ, which maintains excellent flashover performances of ceramic surface, is 10{sup}12Ω. Second, experimental vacuum interrupters (Vis) were produced to measure breakdown voltage before and after forty short-circuit current switchings with 20-40 kA{sub}(rms) and were disassembled to measure the ρ of their inner ceramic surface. In a VI, which has inside diameters at both ends of the main shield much larger than the contact diameter, ρ was reduced to 10{sup}4Ω, further decreasing breakdown voltage between terminals.
机译:我们研究了陶瓷表面金属蒸气污染对真空中的闪络电压(FOV)的影响。首先,利用从CuCr触点发出的金属蒸气的沉积现象,制造了表面电阻率(ρ)为10 {sup} 2-10 {sup}15Ω的圆盘状氧化铝(Al {sub} 2O {sub} 3)陶瓷。陶瓷的脉冲FOV随ρ的减小而减小;当ρ低于10 {sup}12Ω时,FOV,对FOV的调节效应和FOV的散射减小。因此,保持陶瓷表面优异的飞弧性能的ρ的标准值为10 {sup}12Ω。其次,生产了实验性真空灭弧室(Vis),以测量20-40 kA {sub}(rms)的四十次短路电流开关前后的击穿电压,并将其拆开以测量其内部陶瓷表面的ρ。在主屏蔽两端的内径比触点直径大得多的VI中,ρ减小到10 {sup}4Ω,从而进一步降低了端子之间的击穿电压。

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