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Luminescence evolution from alumina ceramic surface before flashover under direct and alternating current voltage in vacuum

机译:真空中直流电和交流电下闪络前氧化铝陶瓷表面的发光演化

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The luminescence evolution phenomena from alumina ceramic surface in vacuum under high voltage of direct and alternating current are reported, with the voltage covering a large range from far below to close to the flashover voltage. Its time resolved and spatial distributed behaviors are examined by a photon counting system and an electron-multiplying charge-coupled device (EMCCD) together with a digital camera, respectively. The luminescence before flashover exhibits two stages as voltage increasing, i.e., under a relative low voltage (Stage A), the luminescence is ascribed to radiative recombination of hetero-charges injected into the sample surface layer by Schottky effect; under a higher voltage (Stage B), a stable secondary electron emission process, resulting from the Fowler-Nordheim emission at the cathode triple junction (CTJ), is responsible for the luminescence. Spectrum analysis implies that inner secondary electrons within the surface layer of alumina generated during the SSEE process also participate in the luminescence of Stage B. A comprehensive interpretation of the flashover process is formulated, which might promote a better understanding of flashover issue in vacuum.
机译:据报道,在直流和交流电的高电压下,真空中氧化铝陶瓷表面的发光演化现象,电压覆盖范围很广,从远低于到接近闪络电压。它的时间分辨和空间分布行为分别由光子计数系统和倍增电子耦合器件(EMCCD)以及数码相机检查。闪络之前的发光表现出两个阶段,即电压升高,即在相对较低的电压下(阶段A),该发光归因于通过肖特基效应注入到样品表面层中的杂原子的辐射复合。在较高的电压(B阶段)下,由阴极三重结(CTJ)处的Fowler-Nordheim发射引起的稳定的二次电子发射过程是导致发光的原因。光谱分析表明,在SSEE过程中生成的氧化铝表面层内部的内部二次电子也参与了阶段B的发光。对闪络过程进行了全面的解释,这可能有助于更好地理解真空中的闪络问题。

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