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首页> 外文期刊>Dielectrics and Electrical Insulation, IEEE Transactions on >Effects of Cr2O3 addition on microstructure and vacuum flashover performance of glass-ceramics
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Effects of Cr2O3 addition on microstructure and vacuum flashover performance of glass-ceramics

机译:Cr 2 O 3 的添加对微晶玻璃结构和真空闪蒸性能的影响

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K2O-MgO-SiO2-Al2O3-B2O3-F/Cr2O3 glass-ceramics with higher flashover voltage were fabricated by sintering method. The electrical properties were measured, it was found that the flashover voltage was improved obviously with addition of small amount of Cr2O3. The crystalline phases were identified by XRD and the microstructures were observed by SEM and BSE, the results showed that, there were Cr22O3 "islands" existed on the surface of ceramics. These "islands" could absorb the secondary electron and form the secondary electron "black hole". The electric field distribution on surface was also simulated based on BSE and SEM results by ANSYS, it was showed that the Cr2O2 "islands" also distorted the surface electrical field. Therefore, the flashover voltage was increased. When adding with 3wt% Cr2O3, the hold-off voltage of glass-ceramics reached to 57 kV cm-1 (improved by 45%).
机译:K 2 O-MgO-SiO 2 -Al 2 O 3 -B 2 O 3 -F / Cr 2 O 3 微晶玻璃。测定电性能,发现加入少量Cr 2 O 3 后,闪络电压明显提高。用X射线衍射(XRD)鉴定了晶相,并用扫描电镜(SEM)和扫描电镜(BSE)观察了合金的微观结构。陶瓷。这些“岛”可以吸收二次电子并形成二次电子“黑洞”。并根据ANSYS的BSE和SEM结果对表面电场进行了模拟,结果表明Cr 2 O 2 “岛”也使表面电场畸变。 。因此,闪络电压增加。当添加3wt%Cr 2 O 3 时,微晶玻璃的保持电压达到57 kV cm-1(提高了45%)。

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