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Improved model of metalized film capacitors

机译:金属化薄膜电容器的改进模型

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摘要

Metalized film capacitors are commonly used components in power electronics applications and their characteristics are drastically dependent on their operating frequency. Parasitic parameters could appear at low and high frequencies and disturb substantially the behavior of the component. Proper design of metalized film capacitors requires an understanding of all parasitic parameters' sources and their impacts on the circuit operation. This paper presents a modeling approach based on the complex form of the capacitor impedance to build its equivalent electrical circuit. This approach proved to be more accurate than the traditional modeling technique of identifying the electrical parameters using the modulus of the component impedance. Two different types of capacitors were tested; experimental results allowed to validate our model from 10 kHz to 35 MHz.
机译:金属化薄膜电容器是电力电子应用中常用的组件,其特性在很大程度上取决于其工作频率。寄生参数可能会出现在低频和高频下,并严重干扰组件的行为。正确设计金属化薄膜电容器需要了解所有寄生参数的来源及其对电路操作的影响。本文提出了一种基于电容器阻抗的复杂形式来构建其等效电路的建模方法。事实证明,这种方法比使用组件阻抗模量识别电参数的传统建模技术更为准确。测试了两种不同类型的电容器。实验结果可以验证我们在10 kHz至35 MHz范围内的模型。

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