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Low-field electron emission from thin films of metals

机译:金属薄膜低场电子发射

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The paper presents an experimental study of the low-threshold field electron emission from thin films of metals (Mo, W, Zr, Ni and Ti) deposited on silicon substrates by magnetron sputtering. Several samples of such films having effective thickness in the range 6–10 nm were capable of room-temperature electron emission in electric field with macroscopic intensity as low as a few kV/mm. Optimized thermofield treatment procedure further improved their emission properties reducing the threshold field by several times. AFM study revealed a correlation between film’s emission properties and their surface topography. At the same time, no equally pronounced correlation of the emissivity with other characteristics of coatings (including the sort of the metal and the silicon substrate conductivity type) was detected. Results of the study witness in favor of two-temperature (or hot-electron) emission mechanism for the investigated coatings.
机译:本文通过磁控溅射呈现在沉积在硅基板上的金属薄膜(Mo,W,Zr,Ni和Ti)的低阈值场电子发射的实验研究。 在6-10nm范围内具有有效厚度的这种薄膜的几个样品能够在电场中的室温电子发射,宏观强度低至几kV / mm。 优化的Thermofield处理程序进一步改善了它们的排放性能几次减少阈值场。 AFM研究揭示了薄膜的排放性能与其表面形貌之间的相关性。 同时,检测到与涂层的其他特征的发射率同样明显的相关性(包括金属和硅衬底导电类型)。 研究证明有利于研究的调查涂层的两温(或热电子)排放机制。

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