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首页> 外文期刊>Solar RRL >Enhancing the Photovoltaic Performance of Cu_2ZnSn(S,Se)_4 Solar Cells with Ba Trace Doping: Large Chemical Mismatch Cation Incorporation
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Enhancing the Photovoltaic Performance of Cu_2ZnSn(S,Se)_4 Solar Cells with Ba Trace Doping: Large Chemical Mismatch Cation Incorporation

机译:提高Cu_2ZNSN(SE,SE)_4太阳能电池的光伏性能与BA轨迹掺杂:大化学不匹配阳离子掺入

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摘要

Being absent from larger mismatch of ionic radius and chemical coordinationbetween the cations in Cu_2ZnSn(S,Se)_4 (CZTSSe) can aggravate the formation ofdetrimental cation antisite defects and clusters with low formation energy, whichresults in a serious open-circuit voltage deficit and a challenge for higher powerconversion efficiency of CZTSSe solar cells. External cation doping or alloying is amore effective strategy to solve this issue. Herein, samples of trace Ba dopinginto CZTSSe are fabricated by the sol–gel method and the mechanism of suchtrace Ba doping are studied combined by X-ray diffraction (XRD), Raman, andphotoluminescence (PL) measurements. The performance of CZTSSe solar cellsis increased by 25.7% as 1% Ba is doped into CZTSSe to substitute Zn. Theresults highlight the roles of the trace Ba doping on the performance of CZTSSesolar cells, which is beneficial to the reduced formation of the detrimental defectsand associated clusters. As a consequence, the bandgap fluctuations are reduced,which results in the improvement of VOC and thus the performance of the solarcell. The cation substitution engineering with larger chemical mismatchedalkaline-earth metal cations provides insights for further improvement of CZTSSesolar cells based on earth abundant elements.
机译:不存在较大的离子半径不匹配和化学协调在CU_2ZNSN(S,SE)_4(CZTSSE)的阳离子之间可以加重形成具有低形成能量的损害阳离子缺陷和簇,这导致严重的开路电压缺陷和更高功率的挑战CZTSSE太阳能电池的转换效率。外部阳离子掺杂或合金化是一个更有效的解决这个问题的策略。在此,痕量BA掺杂样品进入CZTSSE通过溶胶 - 凝胶法和这种机制制造通过X射线衍射(XRD),拉曼和曲线组合痕量BA掺杂。光致发光(PL)测量。 CZTSSE太阳能电池的性能增加25.7%,掺杂1%Ba掺入CZTSSE以替代Zn。这结果突出了跟踪BA掺杂对CZTSSE性能的角色太阳能电池,有利于减少不利缺陷的形成和相关的群集。结果,带隙波动减少,这导致了VOC的改善,从而改善了太阳能的性能细胞。阳离子替代工程,具有较大的化学错配碱土金属阳离子提供了进一步改善CZTSSE的见解太阳能电池基于地球丰富的元素。

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  • 来源
    《Solar RRL》 |2021年第11期|2100607.1-2100607.9|共9页
  • 作者单位

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

    Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic Technology and Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300350 P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    band tail, cation doping, Cu_2ZnSn(S,Se)_4, earth-abundant kesterite, solar cells;

    机译:带尾;阳离子掺杂;Cu_2ZNSN(S;SE)_4;瓦斯 - 丰富的ketertite;太阳能电池;

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