...
首页> 外文期刊>Journal of Materials Research and Technology >Enhanced UV photodetectivity in solution driven ZnO nanosheets via piezo-phototronic effect
【24h】

Enhanced UV photodetectivity in solution driven ZnO nanosheets via piezo-phototronic effect

机译:通过压电反力效应,增强溶液驱动ZnO纳米片中的UV光电探测性

获取原文
           

摘要

Here in, we report the fabrication of thin two dimensional (2D) ZnO nanosheets (NSs) flexible piezo-phototronic ultraviolet (UV) photodetector (PD). The morphological and optical propertiesof theas-synthesizedZnONSs is characterizedindetail.TheflexibleAgeZnONSs-Ag lateral PDs are fabricated on the polyethylene terephthalate (PET) substrate. A striking photoresponse isobservedfor 2D-ZnOunderUVillumination. Furthermore,by introducing astrain(inthe form of bending) the photocurrent and responsivity of this PD can be modulated via piezophototronic effect, emerging from the ZnO nanosheets. The photocurrent enhancement under bending could be attributed to the piezo polarization charges produced at ZnO/Ag interface due to strain. This piezo polarization charges result in the modulation of Schottky barrier (SB) height at the semiconductor/metal interface and induce improved photogenerated charge carriers and reduced recombination probability to result enhanced performances from the ZnO NSs photodetector. The physical mechanisminvolved in the enhancement of photocurrent via piezo-phototronic is proposed to explain change in SB height at semiconductor/ metal interfaceusing thebanddiagrams.This resultsdemonstratesanefficientprototypeof the piezo-phototronic PD based on thin ZnONSs,which provides an effective pathway to enhance the performance of optoelectronic devices.
机译:在此,我们报告了薄二维(2D)ZnO纳米片(NSS)柔性压电型紫外(UV)光电探测器(PD)的制造。雌性合成氮的形态学和光学性质的特征索列。在聚对苯二甲酸乙二醇酯(PET)底物上制造该XeaxiBleagonss-Ag横向PD。一种醒目的光响应isobservedfor 2d-znounderuvillumination。此外,通过引入itrain(弯曲的形式),可以通过压氮功能效应来调节该PD的光电流和响应度,从ZnO纳米液中出现。弯曲下的光电流增强可归因于由于应变而在ZnO / Ag接口处产生的压电偏振电荷。该压电偏振电荷导致在半导体/金属界面处的肖特基屏障(SB)高度的调制,并诱导改进的光生电荷载体和降低的重组概率,以产生来自ZnO NSS光电探测器的增强性能。提出了通过压电转换的增强中的物理机制探讨,以解释SBS界面图的半导体/金属的SB高度的变化。基于薄Znons的压电调光PD的结果DemonStrateAnfityProotypof,这提供了增强光电性能的有效途径设备。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号