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首页> 外文期刊>Advances in Automobile Engineering >Synthesis and physical properties of micro-nanostructured V2O5: Structure, optical characterization and sunlight photocatalytic activity
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Synthesis and physical properties of micro-nanostructured V2O5: Structure, optical characterization and sunlight photocatalytic activity

机译:微纳米结构V2O5的合成与物理性质:结构,光学表征和阳光光催化活性

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摘要

Bulk V2O5 is a diamagnetic semiconductor with a band gap (Eg) of about 2.3 eV, which is based on the ionic configuration with filled O2p and unoccupied V3d orbitals. However, the special electronic structure of V2O5 forms three bands, including V3d states, V3d split-off states and mid-gap states, which lead to interesting optical properties of V2O5 micronanostructures. Therefore, the band edge absorption and Photoluminescence (PL) peak positions of low-dimensional V2O5 material are not coincident. In this study, the fabrication processes, structure, optical characterization and photocatalytic activity of V2O5 micronanostructures, including thin films, nanoparticles, micro-nanorods, micronanowires, nanospheres, Nanohollows (NHs) and V2O5/RGO nanocomposites were summarized and analyzed. The wide ranges of band edge absorption and broad PL of V2O5 micro-nanostructures are clarified in terms of factors such as the morphology, synthesis method, growth conditions, micronano size and phase transition. The relations among the separation, diffusion, recombination and degradation of the electronhole pairs in V2O5 micro-nanostructures are also studied.
机译:Bulk V2O5是具有约2.3eV的带隙(例如)的抗磁半导体,其基于具有填充O2P和未占用V3D轨道的离子构型。然而,V2O5的特殊电子结构形成三个带,包括V3D状态,V3D分离状态和中间隙状态,这导致V2O5微&#x2的有趣光学性质;纳米结构。因此,低维V2O5材料的带边缘吸收和光致发光(PL)峰值位置不一致。在本研究中,概述并分析了诸如薄膜,纳米颗粒,微纳米峰,微&#x2的薄膜,纳米粒子,微纳米棒,微&#x2的制造方法,结构,光学表征和光催化活性,包括薄膜,纳米粒子,纳米杆(NHS)和V2O5 / Rgo纳米复合材料。根据形态,合成方法,生长条件,微胰岛尺寸和相转变等因素,阐明了V2O5微纳米结构的宽范围的频带边缘吸收和宽PL。还研究了V2O5微纳米结构中的电孔对的分离,扩散,重组和降解的关系。

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