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首页> 外文期刊>Nature Communications >An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction
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An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction

机译:高效稳定的光电化学系统,通过InGaP / GaAs双结具有9%的太阳能转换效率

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Despite III-V semiconductors demonstrating extraordinary solar-to-hydrogen (STH) conversion efficiencies, high cost and poor stability greatly impede their practical implementation in photoelectrochemical (PEC) water splitting applications. Here, we present a simple and efficient strategy for III-V-based photoelectrodes that functionally and spatially decouples the?light harvesting component of the device from the?electrolysis part that eliminates parasitic light absorption, reduces the cost, and enhances the stability without any compromise in efficiency. The monolithically integrated PEC cell was fabricated by an epitaxial lift-off and transfer of inversely grown InGaP/GaAs to a robust Ni-substrate and the resultant photoanode exhibits an STH efficiency of ~9% with stability ~150?h. Moreover, with the ability to access both sides of the device, we constructed a?fully-integrated, unassisted-wireless "artificial leaf" system with an STH efficiency of ~6%. The excellent efficiency and stability achieved herein are attributed to the light harvesting/catalysis decoupling scheme, which concurrently improves the optical, electrical, and electrocatalytic characteristics.
机译:尽管III-V半导体表现出非凡的太阳能 - 氢气(STH)转换效率,稳定性高,稳定性差极大地阻碍了光电化学(PEC)水分裂应用中的实际实施。在这里,我们为III-V基光电展示了一种简单而有效的策略,其在功能上和空间上从α电解部分脱离装置的光收集部件,从而降低了寄生光吸收,降低了成本,并增强了没有任何稳定性的效率妥协。通过外延升降的外延剥离和转移到稳健的Ni-基材的外延升降和转移到稳健的Ni底物,并且所得光阳极的稳定性〜150〜150μm〜150≤h的效率为〜150Ω·h的效率〜150μm的效率为〜150μm的效率的STH效率〜150Ω·H的效率〜150Ω·β的STH效率的升高和将倒入的InGaP / GaAs转移。此外,通过进入设备的两侧的能力,我们构建了一个完全集成的无线无线“人造叶”系统,具有〜6%的STH效率。本文所实现的优异效率和稳定性归因于光收集/催化去耦方案,其同时改善光学,电气和电催化特性。

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