首页> 外文期刊>Journal of Materials Research and Technology >E?ect of restricted structural deformation on magnetic and electrical properties in GaFeO 3 with Zn, Ti co-doping
【24h】

E?ect of restricted structural deformation on magnetic and electrical properties in GaFeO 3 with Zn, Ti co-doping

机译:E?Gafeo中磁性电气性能的限制结构变形 3 用zn,ti co-ping

获取原文
           

摘要

Mossbauer spectroscopy, magnetic measurements, X-ray diffraction (XRD), as well as impedance analyzer are some of the techniques that have been employed in this study to evaluate how the dielectric, magnetic and structural properties of GaFeO3(GFO) ceramics are affected by Ti and Zn doping. polycrystalline Ga1-xZnxFe1-xTixO3(0?≤?×?≤?0.1) were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc21n space group. The magnetic transition temperature decrease due to the dilution of the magnetic interaction. A noteworthy effect of substitution of multiple elements at the Ga and Fe sites on dielectric constant and tangent loss of GaFeO3 has been observed. Complete studies of temperature and frequency dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material. Impedance spectroscopy results have revealed a distinct conduction process at grain and grain boundaries.
机译:Mossbauer光谱,磁测量,X射线衍射(XRD)以及阻抗分析仪是本研究中采用的一些技术,以评估Gafeo3(GFO)陶瓷的电介质,磁性和结构性质受到影响Ti和Zn掺杂。通过固态反应制备多晶Ga1-xZnxFe1-xtixo3(0≤≤x≤≤≤x≤x≤x≤≤x≤x≤1.1)。它们展示了具有PC21N空间组的正晶晶体结构。由于磁性相互作用的稀释,磁性转变温度降低。观察到在Ga和Fe站点上取代多个元素的值得注意的介电常数和Gafeo3的切换损失。完全研究介电常数和阻抗的温度和频率依赖性已经提供了晶粒和晶界对材料的传导机构和介电松弛的影响。阻抗光谱结果揭示了晶粒和晶界的明显传导过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号