首页> 外文期刊>Turkish Journal of Electrical Engineering and Computer Sciences >NVRH-LUT: A nonvolatile radiation-hardened hybrid MTJ/CMOS-based look-up table for ultralow power and highly reliable FPGA designs
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NVRH-LUT: A nonvolatile radiation-hardened hybrid MTJ/CMOS-based look-up table for ultralow power and highly reliable FPGA designs

机译:NVRH-LUT:用于超级功率和高度可靠的FPGA设计的非易失性辐射硬化混合MTJ / CMOS的查找表

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Complementary metal oxide semiconductor (CMOS) downscaling leads to various challenges, such as high leakage current and increase in radiation sensitivity. To solve such challenges, hybrid MTJ/CMOS technology-based design has been considered as a very promising approach thanks to the high speed, low power, good scalability, and full compatibility of magnetic tunnel junction (MTJ) devices with CMOS technology. One important application of MTJs is the efficient utilization in building nonvolatile look-up tables (NV-LUTs) used in reconfigurable logic. However, NV-LUTs face severe reliability issues in nanotechnology due to the increasing process variations, reduced supply voltage, and high energetic particle strike at sensitive nodes of CMOS circuits. This paper proposes a nonvolatile radiation-hardened look-up table (NVRH-LUT) for advanced reconfigurable logic. Compared with previous works, the proposed NVRH-LUT is fully robust against single-event upsets and also single-event double-node upsets that are among the main reliability-challenging issues for NV-LUTs. Results have shown that NVRH-LUT not only provides increasing reliability and reduced bit error rate but also offers low delay and low energy consumption.
机译:互补金属氧化物半导体(CMOS)俯卧位导致各种挑战,例如高漏电流和辐射灵敏度的增加。为解决此类挑战,由于高速,低功耗,良好的可扩展性以及具有CMOS技术的磁隧道交界(MTJ)器件的完全兼容性,基于混合MTJ / CMOS技术的设计被认为是一种非常有前途的方法。 MTJS的一个重要应用是在可重新配置逻辑中建立非易失性查找表(NV-LUT)的有效利用率。然而,由于CMOS电路的敏感节点的增加的过程变化,降低的电源电压和高能量粒子撞击,NV-LUT在纳米技术中面临严重的可靠性问题。本文提出了一种用于高级可重构逻辑的非易失性辐射硬化的查找表(NVRH-LUT)。与以前的作品相比,建议的NVRH-LUT对单事件UPSETS完全稳健,以及单一事件双节点upsets,这是NV-LUTS的主要可靠性问题。结果表明,NVRH-LUT不仅提供了越来越多的可靠性和降低的误码率,而且还提供低延迟和低能耗。

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