High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials

摘要

Two-dimensional (2D) materials such as graphene and transition-metal chalcogenides have been extensively studied because of their superior electronic and optical properties. Recently, 2D materials have shown great practical application in position-sensitive detectors (PSDs), originating from the lateral photoelectrical effect of the materials or junctions. The high position sensitivity and ultrafast photoresponse of PSDs based on 2D materials, especially compatibility with Si technology, may enable diverse optoelectronic applications. In this review, recent studies of PSDs based on 2D materials are summarized, providing a promising route for high-performance PSDs. Photodetectors that can monitor the location of an incident laser spot are useful for applications such as laser beam alignment and stabilization. While silicon p-n or p-i-n detectors are commonly used, Chang Hu, Xianjie Wang and Bo Song from Harbin Institute of Technology in China, have now reviewed the advantages and capabilities of using a variety of 2D materials for performing this task. They report how junctions based on pairing graphene or molybdenum disulfide with silicon can result in positive-sensitive detectors can be highly sensitive and offer an ultrafast response. The good performance is thought to be due to the high charge mobility and strong absorption of the 2D materials. Future challenges include extending the wavelength range of operation of such detectors beyond the visible to the near-infrared and ultraviolet.