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Physical Properties of PDMS (Polydimethylsiloxane) Microfluidic Devices on Fluid Behaviors: Various Diameters and Shapes of Periodically-Embedded Microstructures

机译:PDMS(聚二甲基硅氧烷)微流体器件对流体行为的物理性质:周期性嵌入式微结构的各种直径和形状

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摘要

Deformable polydimethylsiloxane (PDMS) microfluidic devices embedded with three differently-shaped obstacles (hexagon, square, and triangle) were used to examine the significant challenge to classical fluid dynamics. The significant factors in determining a quasi-steady state value of flow velocity ( v ) QS and pressure drop per unit length (? P /? x ) QS were dependent on the characteristic of embedded microstructures as well as the applied flow rates. The deviation from the theoretical considerations due to PDMS bulging investigated by the friction constant and the normalized friction factor revealed that the largest PDMS bulging observed in hexagonal obstacles had the smallest (? P /? x ) QS ratios, whereas triangle obstacles exhibited the smallest PDMS bulging, but recorded the largest (? P /? x ) QS ratios. However, the influence of ( v ) QS ratio on microstructures was not very significant in this study. The results were close to the predicted values even though some discrepancy may be due to the relatively mean bulging and experimental uncertainty. The influence of deformable PDMS microfluidic channels with various shapes of embedded microstructures was compared with the rigid microchannels. The significant deviation from the classical relation (i.e., f~1/Re ) was also observed in hexagonal obstacles and strongly dependent on the channel geometry, the degree of PDMS deformation, and the shapes of the embedded microstructures.
机译:嵌入具有三种不同形状的障碍物(六边形,方形和三角形)的可变形的聚二甲基硅氧烷(PDMS)微流体装置用于检查古典流体动力学的重大挑战。确定流速(V)Qs和每单位长度(ΔP/βx)Qs的压力下降的准稳态值的重要因素取决于嵌入式微结构的特性以及施加的流速。由于摩擦恒定和归一化摩擦因子研究了PDMS凸出引起的理论考虑的偏差显示,在六边形障碍物中观察到的最大PDMS凸出具有最小(ΔP/ x)QS比率,而三角形障碍表现出最小的PDMS凸出,但记录了最大的(?p / x)qs比率。然而,本研究中(v)Qs比对微观结构的影响并不是很重要。结果接近预测值,即使某些差异可能是由于相对均匀的凸出和实验性的不确定性。将具有各种形状的嵌入式微结构的可变形PDMS微流体通道的影响与刚性微通道进行比较。在六边形障碍物中也观察到与经典关系(即,F〜1 / Re)的显着偏差,并且强烈依赖于通道几何形状,PDMS变形程度,以及嵌入式微结构的形状。

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