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High-yield green fabrication of colloidal silicon quantum dots by low-temperature thermal cracking of porous silicon

机译:胶体硅量子点的高屈服绿色制造通过多孔硅的低温热裂纹

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摘要

We developed high-yield green fabrication of colloidal silicon quantum dots (QDs) only by low-temperature treatment of porous silicon (PSi) flakes in a reactive organic solution. Heat treatment at ~50 °C of the PSi flakes in unsaturated hydrocarbon solution mixed with hydrofluoric acid (HF) yields the organically self-surface-passivated Si QD, which exhibit efficient photoluminescence compared with the conventional PSi. The production yield of Si QDs is enhanced by increasing the heat-treatment temperature and HF concentration, and the best results were obtained at ~50 °C and 50%, respectively. The dispersibility of the prepared Si QDs in the solvents can be controlled by using appropriate organic function groups. The efficient transformation into Si QDs without waste is based on thermal cracking of weakly interconnected Si cores of PSi. Performing a practical clean process, the present result provides a promising route for overcoming limitations in the conventional colloidal QD preparation methods.
机译:仅通过在反应性有机溶液中的多孔硅(PSI)薄片的低温处理,开发了高产绿色制造胶体硅量子点(QDS)。与氢氟酸(HF)混合的不饱和烃溶液中的PSI薄片的热处理产生有机上自表面钝化的Si QD,其与常规PSI相比表现出有效的光致发光。通过增加热处理温度和HF浓度来增强SiQDS的生产产率,并且分别在〜50℃和50%获得最佳结果。通过使用适当的有机官能团,可以控制制备的SiQds在溶剂中的分散性。没有废物的Si QD的有效转换基于PSI的弱互连的Si芯的热破裂。执行实用的清洁方法,本结果提供了克服常规胶体QD制备方法中克服限制的有希望的途径。

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