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Investigation of phase evolution and control over phase transformation temperature and thermal hysteresis using stoichiometry and co-doping in VO2 thin films

机译:使用化学计量和vo2薄膜中的化学计量和共掺杂相变温度和热滞后的研究进展和热滞段的研究

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Structural phase transition temperature and its associated hysteresis in VOsub2/sub have been controlled by high valent dopant induced local structural modification which acts as phase nucleation site during phase transformation. Monoclinic phase intensity loops plotted against temperature has been observed to exhibit thermal hysteresis. It is shown that the size, shape and central position of hysteresis loop depend on stoichiometry and doping concentration. Highest reduction in phase transformation temperature and thermal hysteresis width has been observed in case of Wsup+6/sup-Mosup+6/sup co-doping and Wsup+6/sup doping, respectively. Hence energy barrier associated with the structural phase transition has been successfully manipulated to vary T subc/sub and hysteresis width. These findings have implications for designing the phase switching devices and smart window applications.
机译:结构相转变温度及其相关的VO 2 的相关滞后由高价价掺杂剂诱导的局部结构改性控制,其在相变期间用作相成核位点。已经观察到绘制抗温度的单斜相期强度回路表现出热滞后。结果表明,滞后回路的尺寸,形状和中心位置取决于化学计量和掺杂浓度。在W + 6 + 6 / SOP> -MO + 6 + 6 / SOP>共掺杂和W +6 分别掺杂。因此,已经成功地操纵了与结构相转变相关的能量屏障以改变T C 和滞后宽度。这些发现对设计相位交换装置和智能窗口应用具有影响。

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