Dopant activation and photoresponses of boron-doped silicon by self-assembled molecular monolayers

摘要

Self-assembled molecular monolayer doping is an emerging doping technique. In this work, we investigated the activation rate and photoresponses of boron doped silicon by self-assembled molecular monolayer doping. By using low temperature Hall effect measurements and by secondary ion mass spectroscopy, we find that the activation rate of boron in these samples is in the range of 91%–54%, depending on the doping concentration. Interestingly, the photoresponsivity of the boron doped samples is also significantly higher than that of the phosphorus doped samples even though the same doping technique is used. The intriguing photoresponses are closely related to the trapping of photogenerated minority carriers by the defects in the p -type silicon.