S-Parameter-Based Defect Localization for Ultrasonic Guided Wave SHM ?

摘要

In this work, an approach for enabling miniaturized, low-voltage hardware for active structural health monitoring (SHM) based on ultrasonic guided waves is investigated. The proposed technique relies on S-parameter measurements instead of time-domain pulsing and thereby trades off longer measurement times with lower actuation voltages for improved compatibility with dense complementary metal-oxide-semiconductor (CMOS) chip integration. To demonstrate the feasibility of this method, we present results showing the successful localization of defects in aluminum and carbon-fiber-reinforced polymer (CFRP) test structures using S-parameter measurements. The S-parameter measurements were made on benchtop vector network analyzers that actuate the piezoelectric transducers at output voltage amplitudes as low as 1.264 V pp .