Topoelectrical circuit realization of a Weyl semimetal heterojunction

摘要

Weyl semimetals (WSMs) are a recent addition to the family of topological materials, and the physical realization of heterojunctions between different types of WSMs is challenging. Here, we use electrical components to create topoelectrical (TE) circuits for modeling and studying the transmission across heterojunctions, consisting of a Type I WSM source to a drain in the Type II or intermediary Type III WSM phase. For transport from a Type I WSM source to a Type II WSM drain, valley-independent (dependent) energy flux transmission occurs when the tilt and transmission directions are perpendicular (parallel) to each other. Furthermore, “anti-Klein” tunneling occurs between a Type I source and Type III drain where the transmission is totally suppressed for certain valleys at normal incidence. Owing to their experimental accessibility, TE circuits offer an excellent testbed for transport phenomena in WSM-based heterostructures. Type II Weyl semimetals are a relatively recent addition to the family of topological materials but their physical realization is challenging. Here, the authors use electrical circuits, to create a topoelectric system and theoretically model features of a Type I and II Weyl semimetals as well as an intermediary Type III phase.