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首页> 外文期刊>Scientific reports. >Negative Magnetoresistance in Nanotwinned NiMnGa Epitaxial Films
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Negative Magnetoresistance in Nanotwinned NiMnGa Epitaxial Films

机译:Nanotwinned Nimnga外延膜中的负磁阻

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摘要

Magnetic shape memory alloys are under intensive investigation due to their unusual physical properties, such as magnetic shape memory effect, magnetic field induced superelasticity, direct and inverse magnetocaloric effect etc., promising for novel applications. One of the intriguing properties of these materials in a single phase state is a giant magnetoresistance. Here we report the remarkable results about the magnetoresistive properties of epitaxial films of Ni52.3Mn26.8Ga20.9 magnetic shape memory alloy in the temperature range of 100–370?K, well below the martensitic transformation temperature. It was found that the formation of non-collinear magnetic structure due to a nanotwinning of the film results in electron scattering on such a structure and noticeable negative magnetoresistance in the entire investigated temperature range.
机译:由于它们的异常物理性质,例如磁形记忆效应,磁场引起的超弹性,直接和逆磁热效应等,磁性形状记忆合金受到密集调查,这是新的应用。这些材料在单相状态下的有趣性质之一是巨磁阻。在这里,我们报告了Ni52.3MN26.8Ga20.9磁性形状记忆合金的外延薄膜的磁阻性能的显着结果,其温度范围为100-370?K,远低于马氏体转化温度。发现由于薄膜的纳米铅而形成非共线磁性结构导致在这种结构上的电子散射,并且在整个研究的温度范围内具有明显的负磁阻。

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