Gate Drivers for Medium-Voltage SiC Devices

摘要

Extensive research in wide-bandgap material technology such as silicon carbide (SiC) has led to the development of medium-voltage (MV) power semiconductor devices with blocking voltages of 3.3 to 15 kV. When these devices are used in various applications, they are exposed to a high peak voltage stress and a very high $dv/dt$ (50–100 V/ns). These impose stringent requirements on the gate driving stage for these devices in terms of featuring a high isolation voltage capability along with a high $dv/dt$ ruggedness, which makes it necessary to have an ultralow coupling capacitance between primary and secondary sides of the gate drivers. One of the key issues in achieving this MV insulation pertains to the necessary clearance and creepage requirements, as defined in IEC 61800-5-1 standards. While the successful operation of these gate drivers is demonstrated in MV converter applications such as solid-state transformers, and MV grid-connected inverters, substantial research needs to be carried out to improve the gate drivers’ performance and provide a plug-and-play solution. This article aims to comprehensively review these gate drivers and consolidate various required design features concerning their galvanic isolation stage, based on normal and short-circuit operation of MV high-power converter systems. Different device short-circuit protection schemes for these gate drivers are explored in detail. Additional applications and functionalities of the gate drivers, including gate drivers used in the series-connection of MV devices and intelligent gate drivers, are also provided in brief. Based on prior research, this review aims to provide design choices and guidelines for the gate drivers, accelerating the growth and deployment of MV SiC devices for field applications.