Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

摘要

Photoluminescenceandelectricalpropertiesofsuperlatticeswiththin(1to5nm)alternatingsilicon-richsiliconoxideorsilicon-richsiliconnitride,andsiliconoxideorsiliconnitridelayerscontainingsiliconnanocrystalspreparedbyplasma-enhancedchemicalvapordepositionwithsubsequentannealingwereinvestigated.Theentirelysiliconoxidebasedsuperlatticesdemonstratedphotoluminescencepeakshiftduetoquantumconfinementeffect.ElectricalmeasurementsshowedthehysteresiseffectinthevicinityofzerovoltageduetostructuralfeaturesofthesuperlatticesfromSiOa93/Si3N4andSiN0.8/Si3N4layers.Theentirelysiliconnitridebasedsamplesdemonstratedresistiveswitchingeffect,comprisinganabruptconductivitychangeatabout5to6Vwithcurrent-voltagecharacteristichysteresis.Thesamplesalsodemonstratedefficientphotoluminescencewithmaximumat~1.4eV,duetoexitonrecombinationinsiliconnanocrystals...