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首页> 外文期刊>Scientific reports. >Role of C–N Configurations in the Photoluminescence of Graphene Quantum Dots Synthesized by a Hydrothermal Route
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Role of C–N Configurations in the Photoluminescence of Graphene Quantum Dots Synthesized by a Hydrothermal Route

机译:C-N配置在水热路上合成的石墨烯量子点的光致发光中的作用

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摘要

Graphene quantum dots (GQDs) containing N atoms were successfully synthesized using a facile, inexpensive, and environmentally friendly hydrothermal reaction of urea and citric acid, and the effect of the GQDs' C-N configurations on their photoluminescence (PL) properties were investigated. High-resolution transmission electron microscopy (HR-TEM) images confirmed that the dots were spherical, with an average diameter of 2.17 nm. X-ray photoelectron spectroscopy (XPS) analysis indicated that the C-N configurations of the GQDs substantially affected their PL intensity. Increased PL intensity was obtained in areas with greater percentages of pyridinic-N and lower percentages of pyrrolic-N. This enhanced PL was attributed to delocalized π electrons from pyridinic-N contributing to the C system of the GQDs. On the basis of energy electron loss spectroscopy (EELS) and UV-Vis spectroscopy analyses, we propose a PL mechanism for hydrothermally synthesized GQDs.
机译:使用尿素和柠檬酸的容纳,廉价和环保的水热反应成功地合成了含N原子的石墨烯量子点(GQDS),研究了GQDS'C-N配置对其光致发光(PL)性质的影响。高分辨率透射电子显微镜(HR-TEM)图像证实,点球形是球形的,平均直径为2.17nm。 X射线光电子能谱(XPS)分析表明GQD的C-N配置基本上影响了它们的PL强度。在具有较大百分比的吡啶-N和较低百分比的吡咯型-N的区域中获得增加的PL强度。该增强型PL归因于来自吡啶-N的吡啶-N的分层π电子贡献给GQD的C系统。基于能量电子损失光谱(EEL)和UV-Vis光谱分析,我们提出了一种用于水热合成的GQD的PL机理。

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