Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method

摘要

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2?V to 7?V. In the reliability test, the device exhibited a good endurance of over 105 cycles and a long data retention of over 105?s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.