Growth of Amorphous Passivation Layer Using Phenethylammonium Iodide for High-Performance Inverted Perovskite Solar Cells

摘要

Organic–inorganic lead halide perovskite solar cells have realized a rapid increaseof power conversion efficiency (PCE) in the past few years. However, theirperformance still suffers trap-assisted decline due to defects at the surfaceand grain boundaries of the perovskite film. Herein, a phenethylammoniumiodide-lead iodide (PEAI-PbI_2) passivation layer is formed on the CH3_NH_3PbI_3perovskite film. The characterization results indicate that the PEAI coveringlayer leads to the reduction of surface defects and suppression of nonradiativerecombination. By manipulating this surface passivation method, a remarkablyimproved VOC of 1.16 V and an enhanced PCE of 20.8% are achieved.