Performance comparison of III–V//Si and III–V//InGaAs multi-junction solar cells fabricated by the combination of mechanical stacking and wire bonding

摘要

, while the open-circuit voltages of these two samples are measured to be 2.71 and 2.52?V, respectively. After bonding the GaInP/GaAs dual-junction with the Si and InGaAs solar cells, the conversion efficiency is relatively improved by 32.6% and 30.9%, respectively, compared to the efficiency of the GaInP/GaAs dual-junction solar cell alone. This study demonstrates the high potential of combining mechanical stacked with wire bonding and ITO films to achieve high conversion efficiency in solar cells with three or more junctions.