WAFER BONDED III-NITRIDE AND NON-III-NITRIDE MULTI-JUNCTION SOLAR CELLS

摘要

A wafer bonded Ill-nitride and non-lll-nitride photovoltaic device structure, such as multi-junction solar cells, and method for fabricating the said structure that provides higher performance due to improved solar energy conversion efficiency. The Ill-nitride photovoltaic device subcell includes one or more Ill-nitride device layers forming a single junction or multiple junctions, and the said subcell operates by collecting the high energy portion of the solar spectrum and converting it into electricity. The non-lll-nitride photovoltaic device subcell includes one or more non-lll-nitride device layers forming a single junction or multiple junctions, and operates by collecting the energy portion of the solar spectrum that is not absorbed by the said subcell and converting it into electricity. The method of combining the Ill-nitride material with the non-lll-nitride material is through wafer bonding. The wafer bonded lllnitride and said structure may be a two-, three- or multiple-terminal device.