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首页> 外文期刊>Scientific reports. >A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials
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A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials

机译:自限制电烧蚀技术,用于自顶向下合成二维材料的大面积单层薄片

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We report the discovery of an electrochemical process that converts two dimensional layered materials of arbitrary thicknesses into monolayers. The lateral dimensions of the monolayers obtained by the process within a few seconds time at room temperature were as large as 0.5?mm. The temporal and spatial dynamics of this physical phenomenon, studied on MoS2 flakes using ex-situ AFM imaging, Raman mapping, and photoluminescence measurements trace the origin of monolayer formation to a substrate-assisted self-limiting electrochemical ablation process. Electronic structure and atomistic calculations point to the interplay between three essential factors in the process: (1) strong covalent interaction of monolayer MoS2 with the substrate; (2) electric-field induced differences in Gibbs free energy of exfoliation; (3) dispersion of MoS2 in aqueous solution of hydrogen peroxide. This process was successful in obtaining monolayers of other 2D transition metal dichalcogenides, like WS2 and MoTe2 as well.
机译:我们报告了电化学过程的发现,该过程将任意厚度的二维分层材料转换为单层。在室温下几秒钟内,通过该方法获得的单层的横向尺寸大到0.5?mm。使用异位原子力显微镜成像,拉曼映射和光致发光测量在MoS2薄片上研究了这种物理现象的时空动态,追踪了单层形成的起源到基质辅助的自限电化学烧蚀过程。电子结构和原子计算指出了该过程中三个基本因素之间的相互作用:(1)单层MoS2与底物的强共价相互作用; (2)电场引起的剥落吉布斯自由能的差异; (3)将MoS 2分散在过氧化氢水溶液中。该方法成功地获得了其他2D过渡金属二卤化硅的单分子层,例如WS2和MoTe2。

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