...
首页> 外文期刊>Scientific reports. >Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity
【24h】

Enhanced electron-phonon coupling for a semiconductor charge qubit in a surface phonon cavity

机译:表面声子腔中半导体电荷量子位的增强型电子声子耦合

获取原文

摘要

Electron-phonon coupling is a major decoherence mechanism, which often causes scattering and energy dissipation in semiconductor electronic systems. However, this electron-phonon coupling may be used in a positive way for reaching the strong or ultra-strong coupling regime in an acoustic version of the cavity quantum electrodynamic system. Here we propose and demonstrate a phonon cavity for surface acoustic waves, which is made of periodic metal fingers that constitute Bragg reflectors on a GaAs/AlGaAs heterostructure. Phonon band gap and cavity phonon modes are identified by frequency, time and spatially resolved measurements of the piezoelectric potential. Tunneling spectroscopy on a double quantum dot indicates the enhancement of phonon assisted transitions in a charge qubit. This encourages studying of acoustic cavity quantum electrodynamics with surface phonons.
机译:电子-声子耦合是一种主要的去相干机制,通常会在半导体电子系统中引起散射和能量耗散。但是,该电子-声子耦合可以以肯定的方式用于在腔量子电动力学系统的声学版本中达到强耦合或超强耦合状态。在这里,我们提出并演示了用于声表面波的声子腔,该声子腔由周期性金属指制成,该金属指构成GaAs / AlGaAs异质结构上的布拉格反射器。声子带隙和腔声子模式通过压电势的频率,时间和空间分辨测量来识别。双量子点上的隧穿光谱表明电荷量子位中声子辅助跃迁的增强。这鼓励研究具有表面声子的声腔量子电动力学。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号