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APS -APS March Meeting 2017 - Event - First-principles calculation of indirect absorption in transparent conducting oxides

机译:APS -APS 2017年3月会议-活动-透明导电氧化物中间接吸收的第一性原理计算

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Transparent conducting oxides (TCOs) are a technological important class of materials that combine high electrical conductivity with transparency in the visible light spectrum. The most frequently used material is Sn-doped In$_2$O$_3$, also called ITO. The Sn doping provides the free carriers required for the conductivity. The transparency of the material can be attributed to the fact that direct absorption processes, either across-the-gap or by direct free-carrier absorption, require energies larger than that of visible light photons. But light absorption can still occur due to indirect free-carrier absorption, which is usually described by a phenomenological Drude model. To improve the fundamental understanding of the processes limiting the transparency in these materials, we use a fully first-principles methodology based on density functional theory [1]. We will discuss the importance of phonon- and defect-assisted absorption and compare the results for ITO with our earlier results for SnO$_2$ [1]. ~[1] H. Peelaers, E. Kioupakis, and C.G. Van de Walle, Phys. Rev. B 92, 235201 (2015).
机译:透明导电氧化物(TCO)是一类技术上很重要的材料,将高电导率与可见光谱中的透明度结合在一起。最常用的材料是掺锡In $ _2 $ O $ _3 $,也称为ITO。 Sn掺杂提供了导电性所需的自由载流子。材料的透明性可以归因于这样的事实,即跨间隙或通过直接自由载流子吸收的直接吸收过程需要的能量要大于可见光光子的能量。但是由于间接的自由载流子吸收,仍然会发生光吸收,这通常是由现象学的Drude模型描述的。为了提高对限制这些材料透明度的过程的基本了解,我们使用了基于密度泛函理论的完全第一原理的方法[1]。我们将讨论声子和缺陷辅助吸收的重要性,并将ITO的结果与我们先前对SnO $ _2 $ [1]的结果进行比较。H. Peelaers,E。Kioupakis和C.G.。 Van de Walle,物理版本B 92,235201(2015)。

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