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APS -APS March Meeting 2017 - Event - High-fidelity entangling gate for double-quantum-dot spin qubits

机译:APS -APS 2017年3月会议-活动-双量子点自旋量子比特的高保真纠缠门

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Electron spins in semiconductors are promising qubits, because their long coherence times enable nearly a billion coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. We discuss a new entangling gate between two double-quantum-dot spin qubits in GaAs, which uses a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of approximately 99{%}, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90{%}. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault tolerant quantum information processing.
机译:半导体中的电子自旋是很有前途的量子位,因为它们的长相干时间使近十亿个相干量子门操作成为可能。但是,开发可扩展的高保真两比特门仍然具有挑战性。我们讨论了GaAs中两个双量子点自旋量子位之间的新纠缠门,它利用每个量子位中两个点之间的磁场梯度来抑制由于电荷噪声引起的退相干。当磁梯度控制电子之间的电压控制交换相互作用时,量子位相干时间增加一个数量级。使用随机基准测试,我们测量的单量子位保真度约为99 {%},通过自洽的量子测量,状态和过程层析成像,我们测量的纠缠门保真度为90 {%}。将来,在无核自旋材料(例如Si)中使用具有大梯度的双量子点自旋量子位将使双量子位保真度超过容错量子信息处理的阈值。

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