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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Normal and superconducting properties of Co--doped BaFe$_{mathrm{2}}$As$_{mathrm{2}}$ and MgB$_{mathrm{2}}$ thin films after He ion irradiation
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APS -APS March Meeting 2017 - Event - Normal and superconducting properties of Co--doped BaFe$_{mathrm{2}}$As$_{mathrm{2}}$ and MgB$_{mathrm{2}}$ thin films after He ion irradiation

机译:APS -APS 2017年3月会议-事件-稀掺杂Co掺杂的BaFe $ _ {mathrm {2}} $ As $ _ {mathrm {2}} $和MgB $ _ {mathrm {2}} $$的正态和超导特性He离子辐照后的薄膜

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We have investigated the normal and superconducting properties of Co-doped BaFe$_{mathrm{2}}$As$_{mathrm{2}}$ (Ba122) and MgB$_{mathrm{2}}$ bridges irradiated at room temperature using a 30 kV He$+$ beam (ZEISS Orion Plus Helium ion microscope) and doses between 10$^{mathrm{13}}$--10$^{mathrm{17}}$/cm$^{mathrm{2}}$. Our results show that the critical temperature of irradiated region reduces to extless 2K for doses extgreater 3x10$^{mathrm{14}}$/cm$^{mathrm{2}}$ for Ba122 and extasciitilde 1x10$^{mathrm{16}}$/cm$^{mathrm{2}}$ for MgB$_{mathrm{2}}$ films. All the samples show a consistent increase in the resistivity of irradiated region with the increase in the beam dose. Furthermore, irradiated Ba122 becomes insulating at high enough dose (6x10$^{mathrm{16}}$/cm$^{mathrm{2}})$ while MgB$_{mathrm{2}}$ remains metallic at all doses used. This result for Ba122 allows us to fabricate planar SIS Josephson junction in this material; RSJ-like behavior and typical critical voltages I$_{mathrm{c}}$R$_{mathrm{n}}$ of 400 $mu$ V are seen at 10 K.
机译:我们研究了在室温下辐照的共掺杂BaFe $ _ {mathrm {2}} $ As $ _ {mathrm {2}} $(Ba122)和MgB $ _ {mathrm {2}} $电桥的常态和超导特性温度使用30 kV He $ + $光束(蔡司Orion Plus氦离子显微镜),剂量在10 $ ^ {mathrm {13}} $-10 $ ^ {mathrm {17}} $ / cm $ ^ {mathrm { 2}} $。我们的研究结果表明,对于Ba122而言,照射剂量的临界温度降低到极高的2K,对于Ba122来说,剂量为3x10 $ ^ {mathrm {14}} $ / cm $ ^ {mathrm {2}} $,而对于1x10 $ ^ {mathrm {16}} } / cm $ ^ {mathrm {2}} $美元的MgB $ _ {mathrm {2}} $电影。所有样品均显示出随着束剂量的增加,被辐照区域的电阻率不断增加。此外,受辐照的Ba122在足够高的剂量(6x10 $ ^ {mathrm {16}} $ / cm $ ^ {mathrm {2}})$时变得绝缘,而MgB $ _ {mathrm {2}} $在所有剂量下均保持金属性。 Ba122的结果使我们能够在这种材料中制造平面SIS约瑟夫森结。在10 K时可以看到类似RSJ的行为和典型的临界电压I $ _ {mathrm {c}} $ R $ _ {mathrm {n}} $ of 400μmu$V。

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