Heat-up synthesis of Cu₂SnS₃ quantum dots for near infrared photodetection

摘要

Cu₂SnS₃ quantum dots in the size range of 2.7 nm to 3.6 nm were synthesized using a solution based heat up method. The structural, optical and electrical properties were studied using X-ray diffraction, transmission electron microscopy, UV-Vis spectroscopy, X-ray photoelectron spectroscopy and cyclic voltammetry. In this paper we report, the infrared photo detection of Cu₂SnS₃ quantum dots. The responsivity, external quantum efficiency and specific detectivity were measured for the infrared lamp under different applied biases and for different illumination intensities of the 1550 nm and 1064 nm lasers. The responsivity, external quantum efficiency and specific detectivity exhibited high values of 1.76 A W?1, 272.53% and 2.79 × 1011 Jones at ?0.5 V applied bias, under infrared lamp illumination intensity of 0.48 W cm?2.