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Synthesis of uniform rare earth doped Gd2O2S sub-micron sized spheres using gas-aided sulfurization and their optical characteristics

机译:气体辅助硫化法合成稀土掺杂的均匀Gd 2 O 2 S亚微米尺寸球及其光学特性

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摘要

In this work, we report a detailed study of the synthesis of sub-micron sized Gd2O2S spheres using a two-step process: (1) amorphous precursor synthesis using the solvothermal method where a surfactant was used to control particle morphology, followed by (2) crystallization to form Gd2O2S polycrystalline spheres in a sulfur-rich environment. The crystallization and sulfurization processes are investigated by monitoring the crystal growth at different temperatures and under different environments using mainly X-ray diffraction and analysis of the precursor's thermal decomposition profile. The optical emissions of the Er and Yb-Er doped Gd2O2S upon excitation at 975 nm were investigated to identify the optimal dopant concentrations, optimal heat treatment temperature as well as to further elucidate any fine structure changes. Our results also show that the maximum emission intensities were obtained for a heat treatment temperature of 800 °C, where increased dopant diffusion coupled with non-uniform surface segregation at much higher temperatures led to non-uniform dopant distribution and reduced emission intensities. Our findings from these studies would be useful towards the synthesis of brightly-emitting Gd2O2S based luminescent materials as well as for the controlled gas-aided sulfurization of other metal oxysulfides.
机译:在这项工作中,我们报告了对亚微米级Gd 2 O 2 S合成的详细研究球形使用两步过程:(1)使用溶剂热法合成无定形前体,其中使用表面活性剂控制颗粒形态,然后(2)结晶形成Gd 2 O 2 S多晶球。主要通过X射线衍射和前体的热分解曲线分析,通过监测在不同温度和环境下的晶体生长来研究结晶和硫化过程。掺Er和Yb-Er的Gd 2 O 2 S在975 nm激发时的光发射为为了确定最佳掺杂剂浓度,最佳热处理温度以及进一步阐明任何精细的结构变化,我们进行了研究。我们的研究结果还表明,在800°C的热处理温度下可获得最大发射强度,其中更高的温度下掺杂剂扩散的增加​​与表面不均匀的偏析导致掺杂剂分布不均匀且发射强度降低。我们从这些研究中获得的发现将有助于合成基于Gd 2 O 2 S发光的Gd材料以及用于其他金属氧硫化物的受控气体辅助硫化。

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