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A modular synthetic approach for band-gap engineering of armchair graphene nanoribbons

机译:扶手椅石墨烯纳米带的带隙工程的模块化合成方法

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Despite the great promise of armchair graphene nanoribbons (aGNRs) as high-performance semiconductors, practical band-gap engineering of aGNRs remains an unmet challenge. Given that width and edge structures are the two key factors for modulating band-gaps of aGNRs, a reliable synthetic method that allows control of both factors would be highly desirable. Here we report a simple modular strategy for efficient preparation of N?=?6 aGNR, the narrowest member in the N?=?3p (p: natural number) aGNR family, and two unsymmetrically edge-functionalized GNRs that contain benzothiadiazole and benzotriazole moieties. The trend of band-gap transitions among these GNRs parallels those in donor–acceptor alternating conjugated polymers. In addition, post-functionalization of the unsymmetrical heterocyclic edge via C–H borylation permits further band-gap tuning. Therefore, this method opens the door for convenient band-gap engineering of aGNRs through modifying the heteroarenes on the edge.
机译:尽管扶手椅石墨烯纳米带(aGNR)作为高性能半导体具有广阔的前景,但实际的带隙工程化aGNR仍是一项尚未满足的挑战。鉴于宽度和边缘结构是调制aGNR带隙的两个关键因素,因此非常需要一种能够同时控制这两个因素的可靠合成方法。在这里,我们报告了一个简单的模块化策略,可有效制备N?=?6 aGNR,N?=?3p(p:自然数)aGNR系列中最窄的成员以及两个包含苯并噻二唑和苯并三唑部分的不对称边缘官能化GNR 。这些GNR之间的带隙跃迁趋势与供体-受体交替共轭聚合物中的带隙跃迁相似。此外,通过C–H硼化作用对不对称杂环边缘进行后官能化可进一步调节带隙。因此,该方法通过修改边缘的杂芳烃为方便的aGNR带隙工程打开了大门。

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