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首页> 外文期刊>Nature Communications >Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy
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Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

机译:具有垂直磁各向异性的绝缘子薄膜的自旋轨道转矩辅助切换

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摘要

As an in-plane charge current flows in a heavy metal film with spin–orbit coupling, it produces a torque on and thereby switches the magnetization in a neighbouring ferromagnetic metal film. Such spin–orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. Here we report the SOT-assisted switching in heavy metal/magnetic insulator systems. The experiments used a Pt/BaFe12O19 bilayer where the BaFe12O19 layer exhibits perpendicular magnetic anisotropy. As a charge current is passed through the Pt film, it produces a SOT that can control the up and down states of the remnant magnetization in the BaFe12O19 film when the film is magnetized by an in-plane magnetic field. It can reduce or increase the switching field of the BaFe12O19 film by as much as about 500?Oe when the film is switched with an out-of-plane field.
机译:当面内电荷电流通过自旋轨道耦合在重金属膜中流动时,它会产生转矩,从而切换相邻铁磁金属膜中的磁化强度。近年来,对这种自旋轨道转矩(SOT)引起的切换进行了广泛研究,并且显示出比使用常规自旋传递转矩进行切换更高的效率。在这里,我们报告了重金属/磁绝缘体系统中的SOT辅助开关。实验使用的是Pt / BaFe 12 O 19 双层,其中BaFe 12 O 19 层表现出垂直磁各向异性。当充电电流通过Pt膜时,它会产生一个SOT,该SOT可以控制BaFe 12 O 19 膜中残余磁化的上下状态。薄膜被平面内磁场磁化。当用平面外场切换薄膜时,它可以减少或增加BaFe 12 O 19 薄膜的切换场约500?Oe。 。

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