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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy
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APS -APS March Meeting 2017 - Event - Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

机译:APS -APS 2017年3月会议-活动-具有垂直磁各向异性的绝缘子薄膜的自旋轨道转矩辅助开关

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As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.$^{mathrm{1}}$ The experiments made use of Pt/BaFe$_{mathrm{12}}$O$_{mathrm{19}}$ bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe$_{mathrm{12}}$O$_{mathrm{19}}$ is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization ($M_{mathrm{ot }})$ in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When $M_{mathrm{ot }}$ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied.1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038comms12688 (2016).
机译:当面内充电电流在具有自旋轨道耦合的重金属膜中流动时,它会产生可在相邻铁磁金属膜中引起磁化切换的转矩。近年来,对这种自旋轨道转矩(SOT)引起的切换进行了广泛的研究,并且显示出比使用常规自旋传递转矩的切换更高的效率。本演示文稿报告了重金属/电磁绝缘体系统中的SOT辅助开关。$ ^ {mathrm {1}} $$实验是利用Pt / BaFe $ _ {mathrm {12}} $ O $ _ {mathrm {19} } $双层结构。由于其强大的自旋轨道耦合,Pt在先前的研究中已被广泛用于产生纯自旋电流。 BaFe $ _ {mathrm {12}} $ O $ _ {mathrm {19}} $是一种M型钡六角形铁氧体,通常称为BaM。它是少数具有强磁晶各向异性的磁绝缘体之一,并显示出约17 kOe的有效单轴各向异性场。已经发现,BaM膜中的开关响应在很大程度上取决于施加到Pt膜上的充电电流。当在膜平面上施加恒定磁场时,Pt膜中的充电电流可以在上下状态之间切换BaM膜中的磁化强度的正常分量($ M_ {mathrm {ot}})$。当平面内磁场减小到零时,电流还指示剩余磁化的向上和向下状态。当通过扫描一个平面内场来测量$ M_ {mathrm {ot}} $时,响应将自身表现为一个磁滞回线,如果充电电流的符号发生翻转,则该磁滞回线将以完全相反的方式发展。当通过扫出平面外磁场来测量矫顽力时,如果施加适当的充电电流,则其值可以减小或增加约500 Oe。李平,刘天辉,常红,A.卡里索夫,张望,G.查萨巴,李,D.理查森,A.德曼,G.里马尔,H.戴伊,江江,波罗德,S。Field,J。Tang,MC Marconi,A。Hoffmann,O。Mryasov和M. Wu,自然社区。 7:12688 doi:10.1038 / ncomms12688(2016)。

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