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Ultrafast carrier dynamics and radiative recombination in multiferroic BiFeO3 single crystals and thin films

机译:多铁性BiFeO3单晶和薄膜中的超快载流子动力学和辐射复合

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We report a detailed comparison of ultrafast carrier dynamics in single crystals and thin films of multiferroic BiFeO3 (BFO). Using degenerate femtosecond optical pump-probe spectroscopy, we find that the observed dynamics are qualitatively similar in both samples. After photoexcitation, electrons relax to the conduction band minimum through electron-phonon coupling, with subsequent carrier relaxation proceeding via various recombination pathways that extend to a nanosecond timescale. Subtle differences observed in our measurements indicate that BFO films have a higher band gap than single crystals. Overall, our results demonstrate that carrier relaxation in BFO is analogous to that in bulk semiconductors.
机译:我们报告了单铁和多铁性BiFeO3(BFO)薄膜中超快载流子动力学的详细比较。使用简并的​​飞秒光学泵浦探针光谱,我们发现在两个样品中观察到的动力学在质量上都相似。光激发后,电子通过电子-声子耦合而松弛到最小的导带,随后的载流子松弛通过各种复合途径进行,这些复合途径延伸到纳秒级。在我们的测量中观察到的细微差异表明,BFO薄膜的带隙比单晶体高。总体而言,我们的结果表明,BFO中的载流子弛豫与体半导体中的载流子弛豫类似。

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