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Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

机译:改性柠檬酸盐凝胶涂层制备低压掺Pra氧化锌压敏陶瓷的合成机理

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High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.
机译:对低压电子设备的高要求增加了对具有快速响应,高度非线性电流-电压特性和低击穿电压的能量吸收能力的氧化锌(ZnO)压敏电阻的需求。但是,击穿电压和晶粒尺寸之间的折衷成为低压压敏电阻生产中的关键瓶颈。本研究重点介绍了通过直接改性获得击穿电压为2.8至13.3 V / mm的氧化based(Pr 6 O 11 )基ZnO压敏陶瓷的合成机理。柠檬酸盐凝胶涂层技术。通过TG / DTG,FTIR,XRD和FESEM分析检查了前体粉末及其陶瓷。在I-V特性测量的基础上,分析了电特性随Pr 6 O 11 添加的变化。通过将Pr 6 O 11 的量控制在0.2到0.8 mol%,可以将每个晶界的击穿电压调节为0.01至0.06 V,而不会改变晶粒尺寸。非线性系数α在3.0到3.5之间变化,势垒高度在0.56到0.64 eV之间。随着Pr 6 O 11 含量的增加,击穿电压和α值的降低与晶界O空位变化引起的势垒高度减小有关。

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