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Comparitive Study of Modfet Based Low Noise Amplifier Design In The Bandwidth Of 6 Ghz

机译:基于Mosfet的6 GHz带宽低噪声放大器设计的比较研究

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Low noise amplifier is vital in the design of receivers at microwave frequencies. In this paper , the performance of HEMT Low noise amplifier is analyzed at 2.4 GHz within a bandwidth of 6 GHz, FR4 substrate is chosen and Noise figure , Gain are considered as the performance parameters for the comparison. C4 based model obtained by parametric analysis is compared with various other designs in the 6 GHz bandwidth. It is observed that the noise figure and gain values of C4 based design are 0.263 dB and 15.317 dB, which are better when compared with other models.The simulation is carried out using ADS software and performance parameter variation with respect to frequency was studied. The layout of the design is obtained using ADS momentum......
机译:低噪声放大器对于微波频率接收机的设计至关重要。本文分析了HEMT低噪声放大器在6 GHz带宽,2.4 GHz频率下的性能,选择FR4基板,并将噪声系数,增益作为性能参数进行比较。通过参数分析获得的基于C4的模型与6 GHz带宽中的其他各种设计进行了比较。可以看出,基于C4的设计的噪声系数和增益值分别为0.263 dB和15.317 dB,与其他模型相比更好。通过ADS软件进行仿真,研究了性能参数随频率的变化。使用ADS动量获得设计的布局...

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