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首页> 外文期刊>Bulletin of the Korean Chemical Society >UV Enhanced NO2 Sensing Properties of Pt Functionalized Ga2O3 Nanorods
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UV Enhanced NO2 Sensing Properties of Pt Functionalized Ga2O3 Nanorods

机译:Pt功能化的Ga 2 O 3 纳米棒的UV增强NO 2 传感特性

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摘要

Ga2O3 one-dimensional (1D) nanostructures were synthesized by using a thermal evaporation technique. The morphology, crystal structure, and sensing properties of the Ga2O3 nanostructures functionalized with Pt to NO2 gas at room temperature under UV irradiation were examined. The diameters of the 1D nanostructures ranged from a few tens to a few hundreds of nanometers and the lengths ranged up to a few hundreds of micrometers. Pt nanoparticles with diameters of a few tens of nanometers were distributed around a Ga2O3 nanorod. The responses of the nanorods gas sensors fabricated from multiple networked Ga2O3 nanorods were improved 3-4 fold at NO2 concentrations ranging from 1 to 5 ppm by Pt functionalization. The Pt-functionalized Ga2O3 nanorod gas sensors showed a remarkably enhanced response at room temperature under ultraviolet (UV) light illumination. In addition, the mechanisms via which the gas sensing properties of Ga2O3 nanorods are enhanced by Pt functionalization and UV irradiation are discussed.
机译:通过使用热蒸发技术合成了Ga2O3一维(1D)纳米结构。在室温和紫外辐射下,研究了在室温下被Pt转化为NO2气体的Ga2O3纳米结构的形貌,晶体结构和传感性能。一维纳米结构的直径范围从几十到几百纳米,长度范围到几百微米。直径为几十纳米的Pt纳米颗粒分布在Ga2O3纳米棒周围。通过Pt功能化,在1至5 ppm的NO2浓度下,由多个联网的Ga2O3纳米棒制成的纳米棒气体传感器的响应提高了3-4倍。 Pt功能化的Ga2O3纳米棒气体传感器在室温下在紫外线(UV)照射下显示出明显增强的响应。此外,讨论了通过Pt官能化和UV辐照增强Ga2O3纳米棒的气敏特性的机理。

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